| PART |
Description |
Maker |
| MGV125-21-P55 MGV075-15-P55 MGV100-24-P55 MGV075-1 |
KA BAND, 0.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.33 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE CERAMIC PACKAGE-2
|
NIC Components, Corp.
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| UPG103B UPG103P UPG103A1 |
WIDE-BAND AMPLIFIER
Gallium arsenide integrated circuit
|
NEC
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| 3SK0184 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10007 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10011 |
Gallium Arsenide Devices
|
Panasonic
|
| OH10014 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01064B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04073N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
|
