| PART |
Description |
Maker |
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
|
Vishay Semiconductors
|
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
| 1N581707 1N5819-E3/54 1N5819-E3/73 1N5819-E3_54 1N |
DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
Schottky Barrier Rectifiers
|
Vishay Semiconductors
Vishay Siliconix
|
| 1N3064 1N3064T50R 1N3064TR |
Small Signal Diode 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MCL103B-GS08 |
DIODE SILICON, SIGNAL DIODE, ROHS COMPLIANT, GLASS, MICROMELF-2, Signal Diode
|
Vishay Semiconductors
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SB01-05Q SB01-05Q-E |
0.1 A, 50 V, SILICON, SIGNAL DIODE
50V, 100mA Rectifier Shottky Barrier Diode
Small signal(single type)
DIODE SCHOTTKY 50V 0.1A 3MCP
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 1N4150UR-11 1N4150UR-1 JAN1N4150UR-1 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IMBD4448/E8 IMBD4448-E9 |
DIODE 0.15 A, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
GENERAL SEMICONDUCTOR INC
Vishay Semiconductors
|
| JAN1N5620 JANTX1N5614 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| JAN1N4148-1 BE112R |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; IFSM (A): 0.25; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.2 A, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
|
|
