| PART |
Description |
Maker |
| IFS75S12N3T4B11 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| PTFA092213EL-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFA092201FV4R0XTMA1 PTFA092201E PTFA092201EF PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| IDP08E65D1 |
High Power RF LDMOS FETs Temperature stable behaviour of key parameters
|
Infineon Technologies AG Infineon Technologies A...
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTF041501F PTF041501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz
|
Infineon Technologies AG
|
| PTFB193404F |
Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTFA041501E PTFA041501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
|
Infineon Technologies AG
|
| PTFB182503FL PTFB182503EL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz
|
Infineon Technologies AG
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|