| PART |
Description |
Maker |
| FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FS |
From old datasheet system
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R |
18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
Intersil Corporation
|
| AGR21125E AGR21125EF AGR21125EU |
125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| BSS119 Q67000-S007 Q67000-S063 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
SIPMOS ? Small-Signal Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSS84P06 BSS84P-L6327 BSS84P-L6433 |
SIPMOS Small-Signal-Transistor
170 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3
|
Infineon Technologies AG
|
| APT6017WVR |
POWER MOS V 600V 31.5A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT6017JFLL |
POWER MOS 7 600V 31A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
