| PART |
Description |
Maker |
| HY27SG082G2M-TCB HY27UG162G2M-TCB HY27SG162G2M-SEP |
256M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
128M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
128M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| MX23J12840TC-50 |
128M-BIT NAND INTERFACE XtraROMTM 16M X 8 OTPROM, 35 ns, PDSO48
|
Macronix International Co., Ltd.
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| HN58V1001FP-25 HN58V1001FP-25E HN58V1001 HN58V1001 |
Memory>EEPROM>Parallel EEPROM
1M EEPROM (128-kword 】 8-bit) Ready/Busy and RES function
|
Renesas Electronics Corporation
|
| BR93H76RFVM-2CTR BR93H76RFVM-2CE2 BR93H76RFJ-2CTR |
Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM
|
Rohm
|
| BR25H020F-2LB |
Serial EEPROM Series Industrial EEPROM 125?Operation SPI BUS EEPROM
|
Rohm
|
| BR25H010-2C |
Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM
|
Rohm
|
| BR25H080FVM-2CE2 BR25H080FVM-2CTR |
Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM
|
Rohm
|
