PART |
Description |
Maker |
S1GVB60-C |
Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers
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SeCoS Halbleitertechnol...
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RH101 RH103 RH105 |
Voltage 100V ~ 800V 0.8 Amp Silicon Bridge Rectifiers
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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HTD250N1600KOC HTD250N1600KOF HTD250N1600KOB HTD17 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|250A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|170A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|170A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|75A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|81A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|111A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|81A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|162A I(T) THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|162A I(T) THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|142A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|142A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|75A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|75A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|75A I(T) THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|95A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|95A I(T) THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|95A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|95A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|95A I(T) THYRISTOR MODULE|SCR DOUBLER|1.5KV V(RRM)|95A I(T) voltage, ±0.35° linearity, AMP Superseal 282087-1 termination, flat shaft, oval mounting hole, IP67 voltage, ±0.35° linearity, AMP Superseal 282087-1 termination, flat shaft, oval monting hole, IP67 , ±0.6° linearity, AMP Superseal 282087-1 termination, flat shaft, oval mounting hole, IP67 , ±1° linearity, AMP Superseal 282087-1 termination, flat shaft, oval mounting hole, IP67 voltage, ±2° linearity, AMP Superseal 282087-1 termination, round shaft, round mounting hole, IP67 voltage, ±2° linearity, AMP Superseal 282087-1 termination, flat shaft, oval mounting hole, IP67 supply voltage, ±5° linearity, AMP Superseal 282087-1 termination, flat shaft, oval mounting hole, IP67 THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|60A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.3KV V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|180A I(T) XCX Series, Differential, Gage, Vaccum Gage; Signal Conditioning: Unamplified; Pressure Range: ± 5.0 psi; Port Style: Barbed: High Grade THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|142A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|142A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|81A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|45A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|45A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.1KV V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|71A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|71A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|250A I(T) RPN Series, single output style, 90° (±45°) operating range, 20 mA (left), 4 mA (right) output signal, 10 Vdc to 30 Vdc supply voltage, ±2° linearity, AMP Superseal 282087-1 termination, flat shaft, round mounting hole, IP67 RPN Series, single output style, 180° (±90°) operating range, 4 mA (left), 20 mA (right) output signal, 10 Vdc to 30 Vdc supply voltage, ±2° linearity, Deutsch DT04-3P termination, flat shaft, round mounting hole, IP67 THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|45A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|45A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|210A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|210A I(T) RPN Series, single output style, 90° (±45°) operating range, 4 mA (left), 20 mA (right) output signal, 8 Vdc to 30 Vdc supply voltage, ±2° linearity, Deutsch DT04-3P termination, flat shaft, oval mountin hole, IP67 THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|35A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|35A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|35A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.3KV V(RRM)|180A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|250A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|250A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.8KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|81A I(T) THYRISTOR MODULE|SCR DOUBLER|2.4KV V(RRM)|150A I(T) THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|170A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|170A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|170A I(T) THYRISTOR MODULE|SCR DOUBLER|1.1KV V(RRM)|121A I(T) 晶闸管模块|可控硅倍增| 1.1KV五(无线资源管理)| 121A条疙(T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|111A I(T) 晶闸管模块|倍增|半CNTLD |负| 1KV交五(无线资源管理)| 111A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|250A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.6KV五(无线资源管理)| 250A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|250A I(T) 晶闸管模块|倍增|半CNTLD |负| 1KV交五(无线资源管理)| 250A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|250A I(T) 晶闸管模块|倍增|半CNTLD |负| 400V五(无线资源管理)| 250A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|142A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五(无线资源管理)| 142A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|45A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五(无线资源管理)| 45A条疙(T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|101A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五(无线资源管理)| 101A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|81A I(T) 晶闸管模块|倍增|半CNTLD |负| 1KV交五(无线资源管理)| 81A章吾(翻译) THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|81A I(T) 晶闸管模块|可控硅倍增| 200伏五(无线资源管理)| 81A章吾(翻译) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|71A I(T) 晶闸管模块|可控硅倍增器| 600V的五(无线资源管理)| 71A条疙(T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|142A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.4KV五(无线资源管理)| 142A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|142A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五(无线资源管理)| 142A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|2.2KV V(RRM)|150A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 2.2KV五(无线资源管理)| 150A我(翻译 THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|250A I(T) 晶闸管模块|可控硅倍增器| 600V的五(无线资源管理)| 250A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|45A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.4KV五(无线资源管理)| 45A条疙T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.6KV五(无线资源管理)| 210A我(翻译 THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|35A I(T) 晶闸管模块|可控硅倍增器| 600V的五(无线资源管理)| 35A条,我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|45A I(T) 晶闸管模块|倍增|半CNTLD |负| 800V的五(无线资源管理)| 45A条疙(T THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|131A I(T) 晶闸管模块|可控硅倍增| 1.2KV五(无线资源管理)| 131A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|60A I(T) 晶闸管模块|倍增|半CNTLD |负| 800V的五(无线资源管理)| 60A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|121A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.4KV五(无线资源管理)| 121A条疙(T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|170A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五(无线资源管理)| 170A章吾(翻译) THYRISTOR MODULE|SCR DOUBLER|2.6KV V(RRM)|150A I(T) 晶闸管模块|可控硅倍增| 2.6KV五(无线资源管理)| 150A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|142A I(T) 晶闸管模块|倍增|半CNTLD |负| 800V的五(无线资源管理)| 142A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|162A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五(无线资源管理)| 162A章吾(翻译) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|95A I(T) 晶闸管模块|倍增|半CNTLD |负| 800V的五(无线资源管理)| 95A章吾(翻译) XCA Series, Absolute; Signal Conditioning: Amplified; Pressure Range: 2.0 psia to 30.0 psia; Port Style: Barbed 晶闸管模块|倍增|半CNTLD |负| 1KV交五(无线资源管理)| 180A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|75A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|75A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|101A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|121A I(T) THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|121A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|81A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|111A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|75A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|162A I(T) THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|265A I(T)
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ECS, Inc. Electronic Theatre Controls, Inc. Vishay Intertechnology, Inc. Microsemi, Corp. Infineon Technologies AG Avago Technologies, Ltd. ITT, Corp. NEL Frequency Controls, Inc. TE Connectivity, Ltd. Fairchild Semiconductor, Corp. STMicroelectronics N.V. Intel, Corp. OKI SEMICONDUCTOR CO., LTD. Wieland Electric, Inc. Coilcraft, Inc. Renesas Electronics, Corp. Diodes, Inc.
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SM330AS SM320AS SM3200AS SM350AS SM360AS SM3100AS |
Voltage 20V ~ 200V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
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SeCoS Halbleitertechnologie GmbH
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Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五(DRM)的| 40A条口(T)的有效值|18 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 5A条口(T)的有效值|20 TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 4A条口T)的有效值|20 TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 3A条口(T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|20 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五(DRM)的| 40A条口(T)的有效值|18 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|18 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|02 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 700V的五(DRM)的| 25A条口(T)的有效值|20 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|300V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-39 TRIAC|600V V(DRM)|8A I(T)RMS|TO-202 TRIAC|500V V(DRM)|8A I(T)RMS|TO-202 TRIAC|200V V(DRM)|3A I(T)RMS|TO-202 TRIAC|500V V(DRM)|25A I(T)RMS|TO-220 TRIAC|200V V(DRM)|8A I(T)RMS|TO-202 TRIAC|600V V(DRM)|3A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-202 TRIAC|800V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13 TRIAC|500V V(DRM)|15A I(T)RMS|TO-3 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|20A I(T)RMS|TO-220 TRIAC|200V V(DRM)|6A I(T)RMS|TO-220 TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|10A I(T)RMS|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|200V V(DRM)|15A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|500V V(DRM)|12A I(T)RMS|TO-220 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
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Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
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AZ987 AZ987-1C-10DE AZ987-1C-12DE AZ987-1A-10DE AZ |
CAP 27PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 30放大器微型功率继电器用于汽车 CAP 33PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 CAP 22PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 30 AMP SUBMINIATURE POWER RELAY FOR AUTOMOTIVE USE From old datasheet system
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Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers ETC[ETC] ZETTLER electronics
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IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A 200V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 I |
200V N-Channel B-FET / Substitute of IRF640 & IRF640A 200V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor] http://
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IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
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Fairchild Semiconductor
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NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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NTE[NTE Electronics]
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