PART |
Description |
Maker |
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series From old datasheet system
|
Toshiba
|
MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET 8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
|
|
FCD900N60Z |
N-Channel SuperFETII MOSFET 600 V, 4.5 A, 900 m
|
Fairchild Semiconductor
|
2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
STD2NK90Z06 STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z |
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET 2.1 A, 900 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
STMicroelectronics
|
4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
FCD900N60ZCT-ND |
FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ
|
Fairchild Semiconductor
|
8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
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