| PART |
Description |
Maker |
| HM514260AJ-7 HM514260ALJ-7 HM514260ALZ-10 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
256K X 16 FAST PAGE DRAM, 100 ns, PZIP40
|
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 |
8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72
16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
Qimonda AG
|
| MCM514256BJ60R2 MCM514256BJ80R2 |
256K X 4 FAST PAGE DRAM, 60 ns, PDSO20
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
MOTOROLA INC
|
| MSM514256C-60JS |
256K X 4 FAST PAGE DRAM, 60 ns, PDSO20
|
LAPIS SEMICONDUCTOR CO LTD
|
| HM51W4160ALTT-10 HM51W4160ATT-10 |
256K X 16 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| DP3D2X8PY5-60C DP3D16X8PY5-70C DP3ED16X8PY5-70C DP |
2M X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48
16M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
16M X 8 EDO DRAM MODULE, 70 ns, QMA48
4M X 8 EDO DRAM MODULE, 70 ns, QMA48
4M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 50 ns, QMA48
|
Intersil, Corp.
Twilight Technology, Inc.
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| MB81C4256A |
256K x 4-Bit Fast Page Mode Low Power DRAM
|
Fujitsu Media Devices
|
| HYB314171BJ-70 HYB314171BJL-70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.400 INCH, PLASTIC, SOJ-40
|
Infineon Technologies AG
|
| TC514256BZL-60 |
256K X 4 FAST PAGE DRAM, 60 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
|
SIEMENS AG
|
|
