| PART |
Description |
Maker |
| IXA12IF1200TC IXA12IF1200HB IXA12IF1200PB |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| IRFP460PBF |
Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead
|
International Rectifier
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT0408-05A |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| RAD-ISM-2400-ANT-CIR-8-0 |
Particularly suitable for use in industrial halls with a very high reflection component due to metal
|
PHOENIX CONTACT
|
| LM2575-ADJ LM2575 LM2575-5 LM2575-12 LM2575-3.3 LM |
From old datasheet system
1.0 A STEP-OWN VOLTAGE REGULATOR
EASY SWITCHERE 1.0 A STEP-DOWN VOLTAGE REGULATOR
EASY SWITCHERE⑩ 1.0 A STEP-DOWN VOLTAGE REGULATOR
EASY SWITCHERE⒙ 1.0 A STEP-DOWN VOLTAGE REGULATOR
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| MCP111 MCP112 MCP111-195 MCP112T-475E MCP111T-195I |
The MCP111/112 Series are CMOS voltage detectors are well suited for portable, consumer electrics applications due to the extremely ...
Micropower Voltage Detector
|
MICROCHIP[Microchip Technology]
|
| 6418ULT-02B5W1 |
An ideal daytime running lamp due to long life span
|
OSRAM GmbH
|
| IPT12Q06-CEB IPT12Q06-BEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| L2C3-4080107E06000 L2C3-4080105B06000 L2C3-4080105 |
Unsurpassed light quality and CBCP due to small LES
|
Lumileds Lighting Compa...
|
