| PART |
Description |
Maker |
| TGHLV1K00JE TGHHV150RJE TGHLV5K00JE |
Due to their non-inductive design
|
Ohmite Mfg. Co.
|
| WSYN-50-120-12DC-A WSYN-400-220-12DC-A WSYN-400-40 |
POWER/SIGNAL RELAY, DPST, MOMENTARY, 12VDC (COIL), 5A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
Paralleling Relays
|
Tyco Electronics
|
| IPT1608-SEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| AOK20B135E1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| ASJD1200R085 |
Positive Temperature Coeffi cient for Ease of Paralleling
|
Micross Components
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| IPT12Q06-CEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPT1206-BEF IPT1206-TEF IPT1206-CEF IPT1206-SEF |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
