| PART |
Description |
Maker |
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| TC58NVG6DDJTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba.
Toshiba Semiconductor
|
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| AMD29F010B AM29F010B AMD29F010B-120EC AMD29F010B-1 |
From old datasheet system
1 Mbit (128 K x 8-Bit)
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
