| PART |
Description |
Maker |
| PBLS6021D |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| SDH03 |
PNP NPN Darlington H-bridge
PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥）) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| PUMB19 PUMD19 PEMD19 PEMH19 PUMH19 PEMB19 PEMD1911 |
NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = open
NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
PEMD19; PUMD19; NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| XP03312 |
Silicon NPN(PNP) epitaxial planer transistor 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Semiconductor
|
| FMA5AT148 |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
|
| DA142JU-7 |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
DIODES INC
|
| DMG56301 |
100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
PANASONIC CORP
|
| KRA558U |
100 mA, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR USV, 5 PIN
|
Bourns, Inc.
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| NSTB1005DXV504 NSTB1005DXV5T1 NSTB1005DXV5T5 |
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| BC309B BC307 BC307B BC307C BC308C |
Amplifier Transistors(PNP) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
|
