| PART |
Description |
Maker |
| BTA854W BAT854CW BAT854W BAT854AW BAT854SW |
Very low forward voltage Very low reverse current Guard ring protected
|
TY Semiconductor Co., Ltd
|
| 1PS76SB70 |
Low forward volatge Guard ring protected Very small plastic SMD package
|
TY Semiconductor Co., L...
|
| MBR1550CT |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd...
|
| VS-63CPQ100PBF |
Guard ring for enhanced ruggedness and long term reliability
|
Vishay Siliconix
|
| 403CNQ600-1 |
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| MBR20H100CT MBR20H200CT |
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection
|
Taiwan Semiconductor Co...
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAT54AW BAT54SW BAT54CW |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
|
NXP Semiconductors
|
| BAT54A215 BAT54C.215 |
Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
|
NXP Semiconductors
|
| 444CNQ040 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectroni...
|
| 309CMQ135 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectronic (N...
Sangdest Microelectroni...
|
