| PART |
Description |
Maker |
| MR1721 MR1520 |
Partial Resonance PS IC
|
Shindengen Electric
|
| GT50J328 |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
Toshiba Semiconductor
|
| GT60M32306 GT60M323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| AN8038S |
AC-DC switching power supply control IC with RCC local resonance circuit for improved conformance with energy conservation laws
|
Panasonic Corporation
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| SZ5-M0 SZ5-M0-W0-00 SZ5-M0-WN-C9 SZ5-M0-WW-C8 SZ5- |
Superior high Flux for High Current System
Super high Flux output and high
|
Seoul Semiconductor
|
| KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs
Feature
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4738 |
High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700
|
TY Semiconductor Co., L...
|
