| PART |
Description |
Maker |
| STPSC4H065D |
650 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC10H065 STPSC10H065G-TR |
650 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC4H065D |
650 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MCE-6E8F-Z01 |
650 NM LASER DIODE 650 nm激光二极管
|
Electronic Theatre Controls, Inc.
etc
Unity Opto Technology
List of Unclassifed Manufacturers
|
| STW34N65M5 STI34N65M5 |
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh(TM) V Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| DSSK30-0045B |
Power Schottky Rectifier with common cathode 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DSS10-006A IXYSCORP-DSS10-006A |
From old datasheet system
Power Schottky Rectifier
Silicon Schottky Diodes
|
IXYS[IXYS Corporation]
|
| DSSK80-0045 DSSK80-0045B |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
| DSS60-0045B |
CONNECTOR ACCESSORY
Power Schottky Rectifier
Silicon Schottky Diodes
|
IXYS[IXYS Corporation]
|
|
