| PART |
Description |
Maker |
| RF4C050AP |
Pch -20V -10A Middle Power MOSFET
|
Rohm
|
| RF6C055BC |
Pch -20V -5.5A Middle Power MOSFET
|
ROHM
|
| RQ5C060BCTCL |
Pch -20V -6A Middle Power MOSFET
|
ROHM
|
| RF4E075AT RF4E075ATTCR |
Pch -30V -7.5A Middle Power MOSFET
|
ROHM
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| FX20KMJ-3-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX6ASJ-03 FX6ASJ-0306 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX50KMJ-2-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
