| PART |
Description |
Maker |
| JANSR2N7272 FN4297 |
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FS |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXTK180N15 |
High Current MegaMOSTMFET 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| NTUD3129P |
Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
|
ON Semiconductor
|
| STP310N10F7 |
N-channel 100 V, 2.3 mΩ typ., 180 A STripFET VII DeepGATE Power MOSFET in a TO-220 package
|
STMicroelectronics
|
| STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package
|
ST Microelectronics
|
| IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
| AGR09180EF |
180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
|
