PART |
Description |
Maker |
KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44 IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44 IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC Aeroflex, Inc. Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
LY61L2568 LY61L2568LL LY61L2568ML LY61L2568MV LY61 |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256K X 4 STANDARD SRAM, 8 ns, PDSO32 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的)在商业和工业温度范围操作 TV 23C 21#20 2#16 SKT PLUG REC 64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
MBM29DL400BC-12 MBM29DL400BC-70 MBM29DL400BC-55 MB |
CONNECTOR, PROPRIETARY ITEM. RoHS Compliant: Yes High speed CAN transceiver 4M (512K X 8/256K X 16) BIT
|
Fujitsu Limited http:// Fujitsu Component Limited. Fujitsu Component Limit...
|
HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62UF1640 HY62UF16403A HY62UF16403A-I |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
A63P83361E-8F A63P83361 A63P83361E A63P83361E-6.5 |
256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output 256 × 36位同步计数器高的Burst SRAM的速度和流量,通过数据输出
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|