| PART |
Description |
Maker |
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HC5503C HC5503CCB HC5503CCP |
Unbalanced PBX/Key System SLIC, Subscriber Line Interface Circuit
Unbalanced PBX/Key System SLIC/ Subscriber Line Interface Circuit
Bipolar Transistor; Collector Emitter Voltage, Vceo:50V; Transistor Polarity:NPN; Power Dissipation:900mW; DC Current Gain Min (hfe):180; Collector Current:500A; Package/Case:3-TO-92
|
INTERSIL[Intersil Corporation]
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
