| PART |
Description |
Maker |
| IRFR3706LPBF IRFU3706 |
High Frequency Isolated DC-DC
|
International Rectifier
|
| IRF3706LPBF IRF3706PBF |
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
|
International Rectifier
|
| IRFR3704TRPBF IRFR3704TRLPBF IRFR3704PBF |
30 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
|
International Rectifier
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| VXO-1S-PEM-6P |
High frequency SMD VCXO LVPECL Output frequency up to 700 MHz
|
QUARTZCOM the communications company
|
