| PART |
Description |
Maker |
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF |
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
4 Banks x 2M x 16bits Synchronous DRAM
SDRAM - 128Mb
|
HYNIX SEMICONDUCTOR INC
|
| IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| M12L2561616A-7TG |
4M x 16 Bit x 4 Banks Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
| IS42VM16800F-75BLI |
SYNCHRONOUS DRAM, PBGA54
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| M12S64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
