| PART |
Description |
Maker |
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| FMMT449 |
Low equivalent on-resistance.
|
TY Semiconductor Co., Ltd
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| STF5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
| PLO5R020F PLO5R020G PLO5R020H PLO5R020J PLO5R020K |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| GFC240 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
| PMK50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
