| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| BUY24 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)
|
Inchange Semiconductor ...
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
