| PART |
Description |
Maker |
| NTMFS4122N |
30V,23A,Single N Channel,SO 8 Flat Lead Power MOSFET(30V,23A,N沟道功率MOSFET) 30V的，3A条，单个N频道平引脚功率MOSFET0V的，3A条，沟道功率MOSFET的）
30V,23A,Single N Channel,SO 8 Flat Lead Power MOSFET(30V,23A,N娌?????MOSFET)
|
ON Semiconductor
|
| RJK1028DNS RJK1028DNS-00-J5 |
100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STF40NF06 |
N-CHANNEL 60A - 0.024 Ohm - 23A - TO-220 STRIPFET II MOSFET
N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 0923181417 |
Picoflex PF-50 IDT-Board In Z-Style, 14 Circuits, 0.17m (6.69) Length
|
Molex Electronics Ltd.
|
| 0923180817 |
Picoflex PF-50 IDT-Board In Z-Style, 8 Circuits, 0.17m (6.69") Length
|
Molex Electronics Ltd.
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| FDA24N40F |
N-Channel MOSFET, FRFET 400V, 23A, 0.19Ω
N-Channel MOSFET, FRFET 400V, 23A, 0.19ヘ
|
Fairchild Semiconductor
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
| HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler
3 dB 90° Card Couplers
3 dB 90∑ Card Couplers
3 dB 90 Card Couplers
SCR-600VRM 10A
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole
3 dB 90Card Couplers 3分贝90Σ卡耦合
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合
3 dB 90??Card Couplers
3 dB 90?Card Couplers
|
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
HIROSE[Hirose Electric]
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
