| PART |
Description |
Maker |
| HSDL-5420031 HSDL-4420031 HSDL-4400011 HSDL-442001 |
High-Performance IR Emitter in Subminiature SMT Package, Z Bend, Tape & Reel 1.78 mm, 1 ELEMENT, INFRARED LED, 875 nm
High-Performance IR Emitter in Subminiature SMT Package, Gullwing, Tape & Reel 1.78 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
Avago Technologies Ltd.
Lite-On Technology, Corp.
|
| GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8 |
Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20
IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| ATF1502AS ATF1502AS-10AC44 ATF1502AS-10AI44 ATF150 |
High performance EEPROM CPDL, 70 MHz
High Performance E2PROM CPLD
|
ATMEL[ATMEL Corporation]
|
| 2SD2114K |
High DC current gain. High emitter-base voltage. Low VCE (sat).
|
TY Semiconductor Co., Ltd
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| MC1456G MC1556U MC1556G MC1456C MC1456 MC1556 MC14 |
INTERNALLY COMPENSATED, HIGH PERFORMANCE OPERATONAL AMPLIFIER
High Performance Operational Amplifier
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| 2SD1611 |
High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| SP202E SP202ECN SP202ECP SP202ECT SP202EEN SP202EE |
DUAL LINE TRANSCEIVER, PDIP16
High-Performance RS-232 Line Drivers/Receivers
5V High Performance RS232 Transceivers
High Speed, Low Power Quad RS-422 Differential Line Receiver
High Speed, 3.3V Quad RS-422 Differential Line Driver
|
EXAR CORP
SIPEX[Sipex Corporation]
|
