| PART |
Description |
Maker |
| CM900DUC-24NF |
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
|
Mitsubishi Electric Semicon...
|
| CM50TF-28H |
122 x 32 pixel format, LED Backlight available 50 A, 1400 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 50 Amperes/1400 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM400HA-28H |
Single IGBTMOD 400 Amperes/1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| ID226010 |
DUAL IGBTMOD-TM POWER MODULE
|
Powerex Power Semiconductors
|
| ID226005 |
DUAL IGBTMOD-TM POWER MODULE
|
Powerex Power Semiconductors
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| IRHNB7Z60 IRHNB8Z60 |
30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
|
International Rectifier
|
| CM200DU-24H |
Dual IGBTMOD 200 Amperes/1200 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM300DY-24H |
Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM450DY-24S |
Powerex Dual IGBTMOD Modules are designed for use in switching applications.
|
Powerex Power Semiconductors
|
