PART |
Description |
Maker |
W971GG6JB W971GG6JB25I |
8M ?8 BANKS ?16 BIT DDR2 SDRAM DLL aligns DQ and DQS transitions with clock, Auto Refresh and Self Refresh modes, Write Data Mask
|
Winbond
|
W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
M53S128324A-2E |
Bi-directional data strobe (DQS)
|
Elite Semiconductor Mem...
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NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K |
DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL 4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100 DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL 4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
|
Samsung Semiconductor Co., Ltd.
|
K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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