| PART |
Description |
Maker |
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBSS4230PANP |
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS302PZ |
20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏，5.5安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor 60伏，4.7安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏，4安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| PBSS4160DPN PBSS4160DPN/T2 |
60 V, 1 A NPN-PNP low VCEsat (BISS) transistor PBSS4160DPN<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-free,;
1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS301PD |
20 V, 4 A PNP low VCEsat (BISS) transistor
|
Philips
|
| PBSS3515M |
15 V, 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS305PX |
80 V, 4.0 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
