| PART |
Description |
Maker |
| IR2520D IR2520DS IR2520S |
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin Dip package.
600V Ballast Controller IC with Adaptive Zero-Voltage Switching, Internal Crest Factor Over-Current Protection and an Integrated Bootstrap Diode in a 8-Pin SOIC package.
IC,BALLAST/BACKLIGHTCONTROLLER/DRIVER,DIP,8PIN,PLASTIC
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International Rectifier
ir
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| SC251 SC251N SC250 SC250B SC250B3 SC250D SC250D3 S |
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 800 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 600 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 400 V.
Triac. Bidirectional triode thyristor. 15A RMS. Repetitive peak off-state voltage 200 V.
TRIACS BIDIRECTIPNAL TRIODE THYRISTORS
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
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Glenair, Inc.
Seme LAB
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| A290021T-120 A290021TL-55 A290021T-90 A290021TL-12 |
256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K × 8位CMOS 5.0伏只，引导扇区闪
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MB 32C 32#20 SKT RECP
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
MB 6C 6#20 PIN RECP
Reed Switch; Pull-In Amp Turns Max:20; Pull-In Amp Turns Min:10; Circuitry:SPST-NO; Switching Current Max:0.5A; Switching Voltage Max:200V; Mounting Type:Surface Mount; Contact Rating:10 VA; Supply Current:1.5A RoHS Compliant: Yes
RELAY, REED SPDT 12VDC
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Limit Switch,VERTICAL R/A,SPDT,ON-(ON),QUICK CONNECT Terminal,SIMULATED ROLLER
SWITCHES
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
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AMIC Technology, Corp.
AMIC Technology Corporation
|
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| Z0110NA/2AL2 Z0110NN/2AL2 Z0107MA/1AA2 Z0109MA/1AA |
TRIAC|800V V(DRM)|1A I(T)RMS|TO-92
MEMORY 16MBYTES 3 VOLT STRATAFLASH 56-LEAD TSOP
256MB SDRAM SODIMM
IC APEX 20KE FPGA 200K 484-FBGA
IC, ISP EPM7192SQC160-7
IC MAX 7000 CPLD 32 44-PLCC
FPGA Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
CPLD Logic IC; Logic Type:Programmable; No. of Macrocells:64; Package/Case:68-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No
8Mb Boot Block Flash
TRIAC|700V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
Programmable Logic IC; Logic Type:Programmable; Package/Case:84-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 可控硅| 800V的五（DRM）的| 1A条口T）的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|TO-92 可控硅| 600V的五（DRM）的| 1A条口T）的有效值|92
TRIAC|700V V(DRM)|1A I(T)RMS|TO-92 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 600V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五（DRM）的| 1A条口T）的有效值|采用SOT - 223
|
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
OMRON Scientific Technologies, Inc.
Supertex, Inc.
TE Connectivity, Ltd.
Omron Electronics, LLC
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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Continental Device India Limited
|
| TS5204CY50 TS5204 TS5204CX TS5204CX1.8 TS5204CX18 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
150mA Low Noise LDO Voltage Regulator
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
http://
|
| BD537 BD535 BD533 BD533J |
NPN Epitaxial Silicon Transistor
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:60mA
Medium Power Linear and Switching Applications 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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