| PART |
Description |
Maker |
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| T15M256B T15M256B-70D T15M256B-70DI T15M256B-70J T |
32K X 8 LOW POWER CMOS STATIC RAM
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| T15V256A-85RI T15V256A T15V256A-70D T15V256A-70DI |
32K X 8 LOW POWER CMOS STATIC RAM
|
TMT[Taiwan Memory Technology]
|
| IS65C256AL12 IS62C256AL IS65C256AL-45ULA3 IS65C256 |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
Integrated Silicon Solu...
|
| IS62LV256AL-20J IS62LV256AL-20JI IS62LV256AL-20T I |
32K X 8 LOW VOLTAGE CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS65LV256AL-45TLA3 IS65LV256AL-45UA3 IS65LV256AL-4 |
32K x 8 LOW VOLTAGE CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7007L IDT7007L15G IDT7007L15GI IDT7007L15J IDT7 |
High-speed 32K x 8 dual-port static RAM, 55ns, low power
32K x 8 Dual-Port RAM
From old datasheet system
High-speed 32K x 8 dual-port static RAM, 15ns, low power
|
IDT[Integrated Device Technology]
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
