| PART |
Description |
Maker |
| HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
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IRF[International Rectifier]
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| STB160NF03L 7460 |
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET POWER MOSFET N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET From old datasheet system N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFETPOWER MOSFET N沟道30V 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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| STS4DNFS30L 8566 STS4DNFS30 |
N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER N-CHANNEL 30V - 0.044 OHM - 4A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIER N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER From old datasheet system N-CHANNEL POWER MOSFET N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET?/a> II MOSFET PLUS SCHOTTKY RECTIFIER
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET N-Channel PowerTrench庐 MOSFET N-Channel PowerTrench㈢ MOSFET N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
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| 3N191 X3N190-91 3N190 3N190-91 X3N191 |
50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 30V N-Channel PowerTrench MOSFET Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
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Calogic LLC Calogic LLC CALOGIC[Calogic, LLC]
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| IRL3103L IRL3103S IRL3103STRR IRL3103STRL |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
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IRF[International Rectifier]
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| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
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Fairchild Semiconductor, Corp.
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
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Renesas Electronics, Corp. NXP Semiconductors N.V.
|
| FDB887010 FDB8870F085 FDB8870-F085 |
30V N-Channel PowerTrenchMOSFET N-Channel PowerTrench? MOSFET 30V, 160A, 3.9mΩ
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Fairchild Semiconductor
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