| PART |
Description |
Maker |
| FDB7030BLS FDP7030BLS FDB7030BLSL86Z |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
30V N-Channel PowerTrench?SyncFET
30V N-Channel PowerTrenchÒ SyncFET™
30V N-Channel PowerTrench㈢SyncFET⑩
30V N-Channel PowerTrench SyncFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDB6676S FDP6676S FDB6676SS62Z |
76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STS5DNE30L 6147 |
N - CHANNEL 30V - 0.039 Ohm - 5A SO-8 STripFET POWER MOSFET
N - CHANNEL 30V - 0.039ohm - 5A SO-8 STripFETO POWER MOSFET
From old datasheet system
N - CHANNEL 30V - 0.039 - 5A SO-8 STripFET TM POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STS3C3F30L |
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFETII POWER MOSFET
N-CHANNEL 30V - 0.050 OHM -3.5A P-CHANNEL 30V - 0.140 OHM - 3A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET?/a> II POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STK85007 STK850 |
N-channel 30V - 0.0024Ω - 30A - PolarPAK? STripFET Power MOSFET
nullN-channel 30V - 0.0024ヘ - 30A - PolarPAK㈢ STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| CMBT4123 |
0.225W General Purpose NPN SMD Transistor. 30V Vceo, 0.200A Ic, 25 hFE. Complementary CMBT4125
|
Continental Device India Limited
|
| 2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE
|
Continental Device India Limited
|
| FDD044AN03 FDD044AN03L FDU044AN03L |
VARISTOR STD 250VRMS 3225 SMD 35 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30V N-Channel PowerTrench? MOSFET
30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRLML2803 IRLML2803TR IRLML2803PBF |
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
|
IRF[International Rectifier]
|
| IRF9410 IRF9410TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V/ Rds(on)=0.030ohm)
|
International Rectifier
|
