| PART |
Description |
Maker |
| RJP60F4DPM RJP60F4DPM-15 |
600 V - 30 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6018DPK11 |
600 V - 30 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
| IGW50N60H3 |
100 A, 600 V, N-CHANNEL IGBT, TO-247 GREEN, PLASTIC PACKAGE-3
600V high speed switching series third generation
|
INFINEON TECHNOLOGIES AG
|
| RD0306LS-SB |
3 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
| PA905C6 |
LOW LOSS SUPER HIGH SPEED RECTIFIER 20 A, 600 V, SILICON, RECTIFIER DIODE
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| VO2631-X017T VO2601 VO2601-X017T |
High Speed Optocouplers 10Mbd High-Speed Dual CTR>300%
High Speed Optocoupler, Single and Dual, 10 MBd
|
Vishay Semiconductors
Vishay Siliconix
|
| RJK6052DPP-M0 RJK6052DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
10 A, 600 V, 1.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
|
Renesas Electronics Corporation
Renesas Electronics, Corp.
|
