| PART |
Description |
Maker |
| OD-110LISOLHT |
HIGH TEMPERATURE GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD850WHT |
HIGH TEMPERATURE GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| EMIF06-10006F1 EMIF06-10006 |
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
6 LINES EMI FILTER AND ESD PROTECTION
6 LINES EMI FILTER AND ESD PROTECTION
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 128244 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115161L |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
| OD880F |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850-004 OD-850F-18 |
High-Power GaAlAs IR Emitters
|
OptoDiode Corp
|
