| PART |
Description |
Maker |
| 24C02SC 24C01SC/WF 24C02SC/W08 |
串行EEPROM的| 256X8 |CMOS |晶圆
SERIAL EEPROM|128X8|CMOS|WAFER
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria
|
Microchip
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| MX29LV065B |
64M-Bit CMOS Flash Memory
|
Macronix
|
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX25L6405MI-20 MX25L6405MC-20G MX25L6405MI-20G |
64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| MX25L6402AMI-40G MX25L6402AMC-40 MX25L6402A MX25L6 |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
Macronix International
|
| MX25L6473E MX25L6473EMBI10G MX25L6473EMI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX28F640C3TXAC-90 MX28F640C3TTC-12 MX28F640C3TTI-1 |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA48
|
Macronix International Co., Ltd.
|
| MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
| SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
