| PART |
Description |
Maker |
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| ADA4077-2-ARMZ ADA4077-2BRZ-R7 ADA4077-2BRZ-RL ADA |
The ADA4077-2 is a dual amplifier featuring extremely low offset voltage and drift and low input bias current, noise, and power consumption.
|
Analog Devices
|
| STD5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STFI11N65M2 STF11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| PLO5R020F PLO5R020G PLO5R020H PLO5R020J PLO5R020K |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| PMN50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| AP2126 |
EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD
|
