PART |
Description |
Maker |
MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
AS6C1016-55BIN AS6C1016-55ZIN |
64K X 16 BIT LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
|
BS616LV1010AI55 BS616LV1010ECG70 BS616LV1010DIP55 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
|
LY626416GL-55SLE LY626416GL-45LL LY626416GL-45LLE |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
KM6161000B |
64K X 16-Bit Low Power CMOS Static RAM
|
Samsung Electronics
|
BS616UV1010EI BS616UV1010 BS616UV1010AC BS616UV101 |
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|
N01L63W3A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
KM68512B |
64Kx8 bit Low Power CMOS Static RAM(64K x 8位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM 32K/64K-Bit SPI Serial CMOS E2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
LP62S1664C LP62S1664CU-55LLI LP62S1664CU-55LLT LP6 |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology Corporation AMICC[AMIC Technology]
|
KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|