| PART |
Description |
Maker |
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| AM2302N |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| MSE20N06N |
Low RDS(on) trench technology
|
Bruckewell Technology L...
|
| AM3446N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| KRF7325 |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| SIGC06T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
|
Infineon
|
| IKP15N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON
|
| IKW50N60T Q67040S4718 |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
