| PART |
Description |
Maker |
| KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter
5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER
5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER
RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
| KTC4527 KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA) 三重扩散NPN晶体管（高电压和RELLABILITY高速开关，级SOA
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| ADXL001-250BEZ ADXL001-250BEZ-R7 ADXL001-70BEZ-R7 |
High Performance Wide Bandwidth iMEMS? Accelerometer
SPECIALTY ANALOG CIRCUIT, CQCC8
High Performance, Wide Bandwidth Accelerometer
|
ANALOG DEVICES INC
|
| 651-102-21 651-105-21 651-105-211309 651-105-23 65 |
high performance panel lamps
Colour diffused lens with a wide viewing angle
Suitable for high vibration applications
|
Marl International Limited
Marl International Limi...
|
| GBPC2501 GBPC2508 GBPC25005 GBPC2502 GBPC2504 GBPC |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
50-A, 8-V to 14-V Input, Non-Isolated, Wide Output Adjust, Vertical Power Module w/ TurboTrans Techn 21-DIP MODULE -40 to 85 高硅桥式整流器电流（电压- 5000伏特电流-二五安培
3 A, Wide Input Non-Isolated, Wide Output Adjust Module 7-DIP MODULE -40 to 85 高硅桥式整流器电流（电压- 5000伏特电流-二五安培
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes)
|
PanJit International, Inc.
PanJit International Inc.
PANJIT[Pan Jit International Inc.]
|
| ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10 |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格（x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| APD-080M025-1 |
80 Character Display with Drive Electronics & Controller and Serial Interface, ASCII Character Set, Wide Viewing Angle, High Brightness, Rugged Design, Flicker Free Refresh -High Speed Data Input
|
Vishay
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10685 ULBM45 ASI10653 TVU150A |
NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
