| PART |
Description |
Maker |
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| FDD6632 |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| 2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| RFD8P05 RFD8P05SM RFP8P05 FN2384 |
8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs
8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STB46NF30 STP46NF30 STW46NF30 |
N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET II Power MOSFET in D2PAK, TO-220 and TO-247 packages
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET?II Power MOSFET in D2PAK, TO-220 and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
|
