| PART |
Description |
Maker |
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 1SS268 |
Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| IS9-1825ASRH_PROTO 5962F0251101QEC 5962F0251101QXC |
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM SWITCHING CONTROLLER, 425 kHz SWITCHING FREQ-MAX, CDFP20
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM 1 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, CDIP16
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| MMBD2836 |
Power dissipation
|
SK Electronics
|
| BZT03C20 BZT03C200 BZT03D130 BZT03C10 BZT03C180 BZ |
POWER DISSIPATION: 3.25 W
|
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electronic...
Shenzhen Luguang Electr...
|
| C1815 |
Power dissipation
|
Nanjing International G...
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| FMMT624 |
625mW POWER DISSIPATION
|
SK Electronics
|
| FMMT624 |
625mW POWER DISSIPATION
|
TY Semiconductor Co., Ltd
|
