| PART |
Description |
Maker |
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| AP2305BGN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2305GN |
Advanced Power MOSFETs
|
TY Semiconductor Co., L...
|
| AP2332GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| IXFH75N10Q IXFT75N10Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPER FET POWER MOSFETS Q CLASS
|
IXYS[IXYS Corporation]
ETC
|
| IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| FMM75-01F |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
