| PART |
Description |
Maker |
| 2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT8011JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 51A 0.110 Ohm
|
Advanced Power Technology
|
| 90MT100KPBF 90MT120KPBF 90MT140KPBF 90MT160KPBF 90 |
Three Phase Bridge (Power Modules), 90/110 A
|
Vishay Siliconix
|
| 90-110MT..K 90-110MT.KPBF |
Three Phase Bridge (Power Modules), 90/110 A
|
Vishay Siliconix
|
| AD9883A/PCB AD9883ABSTZ-110 AD9883ABSTZ-140 AD9883 |
110 MSPS/140 MSPS Analog Interface for Flat Panel Displays
Highly Integrated Graphics Interface Chip Includes Three 8-Bit/110 MSPS ADCs
|
Analog Devices
|
| 2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon PNP Transistor
Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
| 2SB1645 |
Silicon PNP triple diffusion planar type Darlington(For power amplification) 8 A, 160 V, PNP, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SA1009 2SA1009A 2SA1009AH 2SA1009AM 2SA1009J 2SA1 |
PNP SILICON POWER TRANSISTORS 进步党硅功率晶体
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MJL3281A MJL1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistor
Power 15A 200V PNP
|
ON Semiconductor
|
