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UFZT600TA - 2 A, 140 V, NPN, Si, POWER TRANSISTOR

UFZT600TA_7493962.PDF Datasheet


 Full text search : 2 A, 140 V, NPN, Si, POWER TRANSISTOR
 Product Description search : 2 A, 140 V, NPN, Si, POWER TRANSISTOR


 Related Part Number
PART Description Maker
MJ15001 MJ15002 ON1979 NH15002 15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
MOTOROLA INC
Motorola Inc
ON Semiconductor
MOTOROLA[Motorola, Inc]
MJ15003.MOD 20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
SEMELAB LTD
CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
Continental Device India Limited
2N6277 2N6275 2N6274 ON0082 POWER TRANSISTORS NPN SILICON
From old datasheet system
100, 120, 140, 150 VOLTS 250 WATTS
ONSEMI[ON Semiconductor]
2N6836 MJ15001 MJ4031 MJ15025 European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
Motorola
AMERICAN MICROSEMICONDUCTOR INC
CSD362 CSD362N CSD362O CSD362R 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE.
NPN PLASTIC POWER TRANSISTOR
Continental Device India Limited
Powerex Power Semiconductors
AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR 2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs
2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC
2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8
2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
CFD2059R CFD2059O 30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
Continental Device India Limited
IXFH140N10P IXFT140N10P PolarHV HiPerFET Power MOSFETs 140 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
IXYS, Corp.
IXYS[IXYS Corporation]
APT5014B2LC APT5014LLC APT5014 POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF91 22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
INTERSIL[Intersil Corporation]
 
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