| PART |
Description |
Maker |
| FG4000BX-90DA FG4000BX90DA |
1600 A, 4500 V, GATE TURN-OFF SCR
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR
3500 V, GATE TURN-OFF SCR
1200 V, GATE TURN-OFF SCR
3600 V, GATE TURN-OFF SCR
2300 V, GATE TURN-OFF SCR
2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
| 5SGA30J4502 |
Asymmetric Gate turn-off Thyristor 1460 A, 4500 V, GATE TURN-OFF SCR
|
ABB, Ltd.
ABB[The ABB Group]
|
| CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| GCU15AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| DG306AE25 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
N.A.
|
