| PART |
Description |
Maker |
| FT230X FT230XS-XXXX FT230XQ-XXXX DSFT230X FT230XQ- |
USB to serial UART interface with optimised pin count for smaller PCB designs
Future Technology Devices International Ltd
Future Technology Devices International Ltd.
(USB to BASIC UART IC)
|
Future Technology Devices International Ltd.
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Future Technology Devices I...
|
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT2232D |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT313HL FT313HL-X FT313HP FT313HP-R FT313HP-X FT31 |
USB2.0 HS Embedded Host Controller
Single chip USB2.0 Hi-Speed compatible
Future Technology Devices International Ltd
|
Future Technology Devic...
List of Unclassifed Man...
|
| EP1AGX35CF1152I6N EP1AGX35DF1152C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
FPGA, 33520 CLBS, PBGA1152 35 X 35 MM, 1 MM PITCH, BGA-1152
|
Altera Corporation
Altera, Corp.
|
| AN209 |
Using Terminator Technology in Stratix & Stratix GX Devices
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Altera Corporation
|
| 2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
