| PART |
Description |
Maker |
| FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
| FDMC8360L |
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m
|
Fairchild Semiconductor
|
| FDMC008N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| ULS-2812H-883 ULS-2802H-883 ULS-2012H-883 ULS-2022 |
N-CHANNEL 100V - O.33 Ohm - 2A SOT-223 STRIPFET POWER MOSFET
N-channel 500V - 2.5O - 4A - TO-220 PowerMESH™ II MOSFET
Single exclusive OR gate
Single bus buffer (3-state)
SINGLE 8 CHANNEL ANALOG MULTIPLEXERS-DEMULTIPLEXERS
Single 2-input OR gate
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
GPS PROCESSOR 八进制外设驱
Quad 2-input nand gate 2输入与非
Single inverter 单反相器
N-channel 100V - 0.32 O - 5A - TO-251/TO-252 STripFET™ Power MOSFET
|
Allegro MicroSystems, Inc.
Panasonic, Corp.
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| SDR0602-181KL SDR0602-390KL SDR0602-820KL SDR0602- |
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS- NON-SHIELDED POWER INDUCTO-LF 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor; Series:SDR0602; Inductance:100uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:7MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:0.32A
|
Bourns, Inc.
BOURNS INC
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
|
