| PART |
Description |
Maker |
| BGU7003 |
Wideband silicon germanium low-noise amplifier MMIC
|
NXP Semiconductors
|
| BGU7003 |
Wideband silicon germanium low noise amplifier MMIC
|
NXP SEMICONDUCTORS
|
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BGA231L7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
|
| BGA461 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies A...
|
| BFP740F BFP740F-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| BGA628L7 |
Silicon Germanium Wide Band Low Noise Amplifier
|
Infineon Technologies AG
|
| BFP840FESD |
Robust Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| BGA619 |
The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
