| PART |
Description |
Maker |
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| Q62702-F1066 BFN25 BFN27 Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| 2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| SOD-123 |
High Breakdown Voltage
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| 2SD1918 |
High breakdown voltage.(BVCEO = 160V) High transition frequency.(fT = 80MHZ)
|
TY Semiconductor Co., Ltd
|
| 2SC5034 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
