| PART |
Description |
Maker |
| A-7859-2561 7859-2561N 15-29-1026 0015291026 |
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (30μ) Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (30渭") Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100") Pitch C-Grid垄莽 Shunt Terminal Housings, (30楼矛") Gold (Au), 2 Circuits, with Pin Stop
|
Molex Electronics Ltd.
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 15-38-1026 A-7859-2A164 7859-2A164N 0015381026 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
|
Molex Electronics Ltd.
|
| LCD160X160A LCD-160X160A |
160 x 160 Dots Graphic LCD 160 × 160点阵图形液晶显示
CONNECTOR ACCESSORY
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| A5030A A5030U A5030Z F1251T P0080SAMC P0300ZA P030 |
solid state crowbar devices
25 V, four-port metallic line protector
65 V, four-port longitudinal two-chip protector
58 V, four-port longitudinal two-chip protector
120 V, four-port metallic line protector
90 V, four-port metallic line protector
75 V, four-port metallic line protector
58 V, ethernet/10 base T/100 Base T protector
65 V, four-port metallic line protector
275 V, two-chip microcapacitance sidactor device
100 V, LCAS asymmetrical multiport device
400 V, multiport balanced sidactor device
100 mA, battrax quad negative SLIC protector
160 mA, battrax quad negative SLIC protector
200 mA, battrax quad negative SLIC protector
400 V, balanced three-chip sidactor device
200 mA, battrax dual negative SLIC protector
58 V, multiport SLIC protector
75 V, multiport SLIC protector
100 mA, battrax dual negative SLIC protector
160 mA, battrax dual negative SLIC protector
65 V, multiport SLIC protector
95 V, multiport SLIC protector
550 V, 50 mA, high surge current sidactor device
25 V, four-port longitudinal two-chip protector
90 V, four-port longitudinal two-chip protector
120 V, four-port longitudinal two-chip protector
190 V, four-port longitudinal two-chip protector
275 V, four-port longitudinal two-chip protector
|
Teccor Electronics
|
| DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| TLWJ1100T11 TLWJ1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLWH1100T11 TLWH1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
